2SC1008 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

2SC1008

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SC1008

2SC1008 TRANSISTOR (NPN)

D FEATURES

T Power dissipation

.,L PCM:

0.8 W (Tamb=25℃)

Collector current

ICM:

0.7

A

O Collector-base voltage

V(BR)CBO:

80

V

C Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

123

NIC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

O Parameter

Symbol

Test conditions

MIN

R Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA , IE=0

80

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA , IB=0

60

T Emitter-base breakdown voltage

V(BR)EBO

IE= 10µA, IC=0

8

C Collector cut-off current

ICBO

VCB=60 V , IE=0

E Emitter cut-off current

IEBO

VEB= 5 V , IC=0

L DC current gain

hFE

VCE= 2 V, IC=50mA

40

E Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB=50 mA

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

J Transition frequency

fT

VCE=10V, IC= 50mA

30

TYP

MAX

0.1

0.1

400

0.4

1.1

UNIT

V

V

V

µA

µA

V

V

MHz

WECLASSIFICATION OF hFE

Rank

R

O

Y

G

Range

40-80

70-140

120-240

200-400

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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