MMBTA44 Ver la hoja de datos (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
Número de pieza
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Fabricante
MMBTA44 Datasheet PDF : 4 Pages
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MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown MMBTA44
Voltage
MMBTA45
Collector-Emitter Breakdown MMBTA44
Voltage
MMBTA45
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
MMBTA44
MMBTA45
Collector Cut-off Current
MMBTA44
MMBTA45
Emitter Cut-off Current
DC Current Gain(Note)
Current Gain Bandwidth Product
SYMBOL TEST CONDITIONS
BVCBO Ic=100µA, IB=0
BVCEO
BVEBO
VCE(sat)
VBE(sat)
ICBO
ICES
IEBO
hFE
fT
Ic=1mA, IB=0
IE=100µA, Ic=0
Ic=1mA, IB=0.1mA
Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
Ic=10mA, IB=1mA
VCB=400V, IE =0
VCB=320V, IE =0
VCE =400V, IB=0
VCE =320V, IB=0
VEB=4V, Ic=0
VCE =10V, Ic=1mA
VCE =10V, Ic=10mA
VCE =10V, Ic=50mA
VCE =10V, Ic=100mA
VCE =20V, Ic=10mA
f=100MHz
MIN TYP MAX UNIT
500
V
400
400
V
350
6
V
0.4
0.5
V
0.75
0.75 V
0.1
µA
0.1
0.5
µA
0.5
0.1 µA
40
50
240
45
40
50
MHz
Output Capacitance
Cob
Note: Pulse test: PW<300µs, Duty Cycle<2%
VCB=20V, IE =0, f=1MHz
7
pF
Revision:20170701-P1
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