MMBTA44 Ver la hoja de datos (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

Número de pieza

componentes Descripción

Fabricante

MMBTA44

NPN EPITAXIAL SILICON TRANSISTOR

Shenzhen Luguang Electronic Technology Co., Ltd 

MMBTA44/45

NPN EPITAXIAL SILICON TRANSISTOR

FEATURES

1. BASE

2. EMITTER

3. COLLECTOR

*Collector-Emitter voltage: VCEO=400V (UTC MMBTA44)

VCEO=350V (UTC MMBTA45)

*Collector current up to 300mA

A

*Complement to UTC MMBTA94/93

*Power Dissipation: PD(max)=350mW

K

MARKING (MMBTA44)

D

G

3D

C

E

B

J

H

SOT-23

Dim

M

Max

A

2.70

3.10

B

1.10

1.50

C

1.0 Typical

D

0.4 Typical

E

0.35

0.48

G

1.80

2.00

H

0.02

0.1

J

0.1 Typical

K

2.20

2.60

All Dimensions in mm

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector-Base Voltage

MMBTA44

MMBTA45

Collector-Emitter Voltage

MMBTA44

MMBTA45

Emitter-Base Voltage

Collector Current

Power Dissipation

Ta=25°C

Tc=25°C

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

Ic

PD

TJ

TSTG

RATINGS

50

400

40

350

6

300

350

1.5

+150

-40 ~ +150

UNIT

V

V

V

mA

mW

W

°C

°C

Revision:20170701-P1

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mail:lge@lgesemi.com

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