KTD1302 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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componentes Descripción

Fabricante

KTD1302

Silicon NPN transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KTD1302

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current – Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

DATA SHEET

数值

Rating

25

20

9.0

300

30

625

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

On Resistance

符号

Symbol

ICBO

IEBO

hFE

VCE(sat)

测试条件

Test Conditions

VCB=25V IE=0

VEB=9.0V IC=0

VCE=2.0V IC=4.0mA

IC=100mA IB=10mA

最小值 典型值 最大值 单位

Min Typ Max Unit

0.1 μA

0.1 μA

200

800

0.25 V

VBE(sat)

fT

Cob

Ron

IC=100mA

VCE=10V

VCB=10V

f=1.0MHz

f=1.0KHz

Vin=0.3V

IB=10mA

IC=1.0mA

IE=0

IB=1.0mA

1.0 V

60

MHz

10

pF

0.6

Ω

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