STF6N60M2 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

STF6N60M2

N-Channel 650V (D-S) Power MOSFET

Unspecified 

STF6N60M2

D.U.T.

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

+

Rg

• dV/dt controlled by Rg

+

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

- VDD

• D.U.T. - device under test

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

Note

a. VGS = 5 V for logic level devices

Fig. 18 - For N-Channel

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