STF6N60M2 Ver la hoja de datos (PDF) - Unspecified

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componentes Descripción

Fabricante

STF6N60M2

N-Channel 650V (D-S) Power MOSFET

Unspecified 

STF6N60M2

/$IBOOFM
7
%4Power MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V) at TJ max.

RDS(on) max. at 25 °C (Ω)

Qg max. (nC)

Qgs (nC)

Qgd (nC)

Configuration

0

VGS = 10 V

1.1







Single

TO-220AB

TO-220 FULLPAK

FEATURES

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

TO-251

D

TO-252

G

GD S

Top View

GDS

Top View

GDS

Top View

GDS

Top View

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Pulsed Drain Current a

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energy b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt d

TJ = 125 °C

EAS

PD

TJ, Tstg

dV/dt

Soldering Recommendations (Peak Temperature) c

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 3.5 A.

c. 1.6 mm from case.

d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

LIMIT

650

± 30

7.0

5.6

28







-55 to +150





300

UNIT

V

A

W/°C

mJ

W

°C

V/ns

°C

E-mail：China@VBsemi TEL:86-755-83251052

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