STB7NK80Z-1 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STB7NK80Z-1

N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.2 A, VGS = 0

ISD = 5.2 A, di/dt = 100

A/µs

VDD = 50 V, Tj = 150°C

(see Figure 21)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

Min. Typ. Max. Unit

5.2 A

20.8 A

1.6 V

530

ns

3.31

µC

12.5

A

Table 7. Gate-source zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO (1) Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30

V

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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