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Número de pieza
componentes Descripción
B55NF06 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
B55NF06
N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET
STMicroelectronics
B55NF06 Datasheet PDF : 18 Pages
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STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 50A, V
GS
= 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 50A,
di/dt = 100A/µs,
V
DD
= 30V, T
j
= 150°C
(see
Figure 16
)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
50
A
200 A
1.5 V
75
ns
170
nC
4.5
A
5/18
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