D716 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

D716

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V (Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V (Max)@IC= 4A

·Complement to Type 2SB686

APPLICATIONS

·Power amplifier applications

·Recommended for 30~35W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

IE

Emitter Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

6

A

60

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SD716

SPTECH website：www.superic-tech.com

1

Share Link: