2SC4583 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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Fabricante
2SC4583 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4583
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage IC=0.1A;IB=0
VcE(sat) Collector-Emitter Saturation Voltage lc=1.5A; IB=0.3A
VBE(sat) Base-Emitter Saturation Voltage
lc= 1.5A;IB=0.3A
ICBO
Collector Cutoff Current
At rated Voltage
800
V
1.0
V
1.5
V
100
nA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hpE-1
DC Current Gain
At rated Voltage
At rated Voltage
lc= 1.5A; VCE=5V
100
nA
100 nA
8
hpE-2
DC Current Gain
lc=1mA;VCE=5V
7
fr
Current-Gain—Bandwidth Product
lc= 0.3A; VCE= 10V
8
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=1.5A, IB1= 0.3A;IB2= -0.6A;
RL=167Q;VBB2=4V
0.5
MS
3.5
US
0.3
US
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