2SB1344 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB1344

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

2SB1344

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

-100

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -50μA; IE= 0

-100

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA

-1.5

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-10 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-3

mA

hFE

DC Current Gain

IC= -2A; VCE= -3V

1000

20000

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

90

pF

fT

Current-Gain—Bandwidth Product

IE= 0.5A; VCE= -5V; ftest= 10MHz

12

MHz

SPTECH website：www.superic-tech.com

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