2SB1344 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SB1344

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

2SB1344

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·High DC Current Gain-

: hFE= 1000(Min)@ (VCE= -3V, IC= -2A)

·Complement to Type 2SD2025

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

-10

A

2

W

30

150

℃

Tstg

Storage Temperature

-55~150 ℃

SPTECH website：www.superic-tech.com

1

Share Link: