2SB1155 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Fabricante

2SB1155

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·Good Linearity of hFE

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max.)@ IC= -7A

·Complement to Type 2SD1706

APPLICATIONS

·Designed for power switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-130

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-15

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

-25

A

80

W

3

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

2SB1155

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