2SB1155 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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Fabricante
2SB1155 Datasheet PDF : 2 Pages
| |||
J.E.15.E.
10duct* , One,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 97081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1155
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -SOV(Min)
• Good Linearity of hFE
• Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ lc= -7A
• Complement to Type 2SD1706
• 'flfeafc*
, ,,
123
J
1I
PIN 1.BASE
2. COLLECTOR
3 a/||TTER
TO-3PFa package
APPLICATIONS
• Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25'C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-15
A
-25
A
80
W
3
150
°C
-55-150
°c
v ,A "• i -TB~—--,>— rsC~|
\ "'.--• .'
A
T f - '/, .. , ,„;_.- 3^«e
* H -*T *. ^-L l
i
i4 ' '
K
^*D
i -*:'\
i-'L-*— N—»-
i
_p. ^.--RJ
i "•',' '' ' ~' '"• ',
mm
DIM WIN MAX
A 2070 21.30
B 14JO 15.30
C 4.30 5.20
D 0.90 1.10
F
3.20 3.40
H 3.70 4.30
J
0.50 0.70
K 16.40 17.00
L
1.90 2.10
N 10.80 11.00
Q
5.60 6.00
R
1.30 2.20
s
310 3.50
T
8.70 9.30
U
O.&S 0.75
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility fbraiiv errors or omissions discovered in its use. "
N.I Semi-Conductors encourages customers to \erity that datasheets are current before placing orders.
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