BFS17S(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFS17S
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFS17S

Collector-base capacitance Ccb = f (VCB)

f = 1MHz

1.3

pF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0

4

8

12 16 20 V 26

VCB

Transition frequency fT = f (IC)

VCE = Parameter

3.0

10V

GHz

5V

3V

2.0

2V

1.5

1.0

1V

0.5

0.7V

0.0

0

5

10

15

20 mA

30

IC

5

Aug-20-2001

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