MPSA06 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MPSA06

NPN General-Purpose Amplifier

ON Semiconductor 

β

Typical Performance Characteristics

200

125 °C

150

25 °C

100

- 40 °C

50

VCE= 1V

0.001

0.01

0.1

I C - COLLECTOR CURRENT (A)

Figure 1. Typical Pulsed Current Gain vs.

Collector Current

0.5

β = 10

0.4

0.3

125 °C

0.2

25 °C

0.1

- 40 °C

0

0.1

1

10

100

1 00 0

I C - COLLECTOR CURRE NT (mA)

Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

1 β = 10

- 40 °C

0.8

25 °C

125 °C

0.6

0.4

0.1

1

10

100

1000

I C - COLLECTOR CURRE NT (mA)

Figure 3. Base-Emitter Saturation Voltage vs.

Collector Current

1

- 40 °C

0.8

25 °C

0.6

125 °C

0.4

VCE = 5V

0.2

0

1

10

100

1000

I C - COLLECTOR CURRE NT (mA)

Figure 4. Base-Emitter On Voltage vs.

Collector Current

10

VCB = 80 V

1

0.1

0.01

0.001

25

50

75

100

125

TA - AMBIE NT TEMP ERATURE (° C)

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.01

I =10mA

C

IC=50mA

IC=100mA

I =250mA

C

I =500mA

C

0.1

1

10

I - Base Current (mA)

B

Figure 6. Collector Saturation Region

© 1997 Fairchild Semiconductor Corporation

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0

3

www.fairchildsemi.com

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