PSMN005-75B Ver la hoja de datos (PDF) - NXP Semiconductors.
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PSMN005-75B Datasheet PDF : 13 Pages
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PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 01 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High frequency computer motherboard
DC-to-DC convertors
OR-ing applicationss
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 75 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
-
-
75 V
-
-
75 A
-
-
230 W
-
50 -
nC
-
4.3 5
mΩ
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