PMBD6100 Ver la hoja de datos (PDF) - NXP Semiconductors.

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PMBD6100

High-speed double diode

NXP Semiconductors. 

NXP Semiconductors

High-speed double diode

Product data sheet

PMBD6100

SYMBOL

PARAMETER

CONDITIONS

IFRM

repetitive peak forward current

IFSM

non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

Tamb = 25 °C; note 1

Note

1. Device mounted on an FR4 printed-circuit board.

MIN.

−

−

−

−

−

−65

−

MAX. UNIT

450

mA

4

A

1

A

0.5

A

250

mW

+150 °C

150

°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

MIN. MAX. UNIT

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

550

700

mV

−

855

mV

−

1

V

IF = 100 mA

0.85

1.1

V

see Fig.5

VR = 50 V

−

VR = 50 V; Tj = 150 °C

−

f = 1 MHz; VR = 0; see Fig.6

−

when switched from IF = 10 mA to −

IR = 10 mA; RL = 100 Ω; measured

at IR = 1 mA; see Fig.7

when switched from IF = 10 mA; −

tr = 20 ns; see Fig.8

100

nA

50

µA

1.5

pF

4

ns

1.75

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

360

500

UNIT

K/W

K/W

2003 Mar 25

3

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