2SD525O Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
2SD525O Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD525
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
100
V
5
V
2.0
V
1.5
V
100 μA
1.0 mA
40
240
20
100
pF
12
MHz
hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
SPTECH website：www.superic-tech.com
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