MMBT2222AT Ver la hoja de datos (PDF) - TY Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMBT2222AT Datasheet PDF : 2 Pages
| |||
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Collector cut-off current
Emitter cutoff current
DC current gain
Symbol
Test conditions
V(BR)CBO IC = 10 μA, IE = 0
V(BR)CEO IC = 10 mA, IB = 0
V(BR)EBO IC = 10 μA, IC = 0
ICBO VCB=60V, IE=0
ICEX VCE=30V,VBE(off)=3V
IEBO VEB= 3V, IC=0
VCE=10V, IC= 0.1mA
hFE VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
collector-emitter saturation voltage *
base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
IC = 150 mA; IB = 15 mA
VCE(sat)
IC = 500 mA; IB = 50 mA
VBE(sat)
fT
td
tr
ts
tf
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 20 mA; VCE = 20 V; f = 100 MHz
VCC=30V, VBE(off)=-0.5V,
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA,IB1=-IB2=15mA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
1P
Product specification
MMBT2222AT
Min Typ Max Unit
75
V
40
V
6
V
10 nA
10 nA
100 nA
40
100
300
42
0.3 V
1
V
0.6
1.2 V
2
V
300
MHz
10 ns
25 ns
225 ns
60 ns
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2
Share Link: 