MMBT2222AT Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

MMBT2222AT

Silicon NPN transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MMBT2222AT

Rev.E Nov.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

数值

Rating

75

40

6.0

600

500

150

-55～150

单位

Unit

V

V

V

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=10μA

IE=0

VCEO IC=10mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=10μA IC=0

Collector Cut-Off Current

ICBO VCB=60V IE=0

Base Cut-Off Current

IEBO VEB=5.0V IC=0

DC Current Gain

hFE VCE=10V IC=150mA

Collector to Emitter Saturation

Voltage

VCE(sat) (1) IC=150mA

VCE(sat) (2) IC=500mA

IB=15mA

IB=50mA

Emitter to Base Saturation Voltage

Collector Output Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

VBE(sat) (1) IC=150mA IB=15mA

VBE(sat) (2) IC=500mA IB=50mA

Cob

VCB=10V

f=1.0MHz

IE=0

fT

IC=20mA VCE=20V

f=100MHz

ton

VCC=30V VBE=-0.5V

IC=150mA IB1=15mA

toff

VCC=30V IC=150mA

IB1=IB2=15mA

最小值 典型值 最大值 单位

Min Typ Max Unit

75

V

40

V

6.0

V

0.01 μA

0.1 μA

100

300

0.3 V

1.0 V

0.6

1.2 V

2.0 V

8.0 pF

300

MHz

35 ns

285 ns

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