MMBT2222AT Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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componentes Descripción
Fabricante
MMBT2222AT Datasheet PDF : 2 Pages
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RoHS
MMBT2222AT
MMBT2222AT TRANSISTOR (NPN)
SOT-523
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
PCM:
0.15 W (Tamb=25℃)
Collector current
ICM:
0.6
A
Collector-base voltage
V(BR)CBO:
75
V
Operating and storage junction temperature range
1. BASE
2. EMITTER
3. COLLECTOR
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 10µA, IE=0
75
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mA, IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
Collector cut-off current
ICBO
VCB=70V, IE=0
0. 1
Collector cut-off current
ICEO
VCE=35V, IB=0
0. 1
Emitter cut-off current
IEBO
VEB= 3V, IC=0
0. 1
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
hFE(5)
VCE=10V, IC= 500mA
40
VCE(sat)1 IC=150 mA, IB= 15mA
0.3
Collector-emitter saturation voltage
VCE(sat)2 IC=500 mA, IB= 50mA
1
VBE(sat)1 IC=150 mA, IB=15mA
1.2
Base-emitter saturation voltage
VBE(sat)2 IC=500 mA, IB= 50mA
2
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
fT
VCE=20V, IC= 20mA
300
f=100MHz
Cob
VCB=10V, IE= 0
f=1MHz
8
td
VCC=30V, IC=150mA
10
tr
VBE(off)=0.5V, IB1=15mA
25
tS
VCC=30V, IC=150mA
225
UNIT
V
V
V
µA
µA
µA
V
V
V
V
MHz
pF
nS
nS
nS
Fall time
tf
IB1= IB2= 15mA
60
nS
Marking
:1P
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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