MMBT2222AT Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

MMBT2222AT

NPN SWITCHING TRANSISTOR

Galaxy Semi-Conductor 

Production specification

NPN SWITCHING TRANSISTOR

MMBT2222AT

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V(BR)CBO

V(BR)CEO

V(BR)BEO

ICEX

IBL

hFE

VCE（sat）

VBE（sat）

Cobo

Cibo

fT

NF

td

tr

ts

tf

Collector-base breakown voltage IC=10μA,IE=0

75

Collector- emitter breakown

voltage

IC=10mA,IB=0

40

Emitter-base breakown voltage IE=10μA,IC=0

6

collector cut-off current

VCE=60V,VEB(OFF)=3.0V

Base cut-off current

VCE=60V, VEB(OFF)=3.0V

DC current gain

VCE=10V,IC=0.1mA

35

VCE=10V,IC=1mA

50

VCE=10V,IC=10mA

75

VCE=10V,IC=150mA

100

VCE=10V,IC=500mA

40

collector-emitter saturation

voltage

IC=150mA; IB=15mA

IC=500mA; IB=50mA

base-emitter saturation voltage

IC=150mA; IB=15mA

IC=500mA; IB=50mA

Output capacitance

IE=0,VCB=10V,f=1MHz

Input capacitance

IC=0,VBE=0.5V,f=1MHz

transition frequency

noise figure

delay time

rise time

IC=20mA,VCE =20V,f=100MHz

300

IC=100μA,VCE =10V,

RS =1kΩ;f =1.0MHz

IC=150mA,IB1=15mA,VBE(off)=-0.5V

-

VCC=30V

-

storage time

fall time

-

VCC=30V,IC=150mA,IB1=IB2=15mA

-

50 nA

50 nA

0.3 V

1V

1.2 V

2.0 V

8 pF

30 pF

MHz

4 dB

10 ns

25 ns

225 ns

60 ns

H020

Rev.A

www.gmicroelec.com

2

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