MMBT2222AT Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
MMBT2222AT Datasheet PDF : 4 Pages
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Production specification
NPN SWITCHING TRANSISTOR
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT2907AT).
z Collector Current Capability Ic=600mA.
z Ultra-small surface mount package.
Pb
Lead-free
MMBT2222AT
APPLICATIONS
z General switching and amplification.
ORDERING INFORMATION
Type No.
Marking
MMBT2222AT
1P
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
MMBT3904T
VCBO
collector-base voltage
75
VCEO
collector-emitter voltage
40
VEBO
emitter-base voltage
6
IC
collector current (DC)
600
Pd
Power dissipation
150
RθJA
Thermal resistance, junction to Ambient
833
Tstg
storage temperature range
-55 to +150
Tj
junction temperature
150
UNIT
V
V
V
mA
mW
°C/W
°C
°C
H020
Rev.A
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