MMBT2222AT Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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MMBT2222AT Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
MMBT2222AT TRANSISTOR (NPN)
FEATURES
z Complementary to MMBT2907AT
z Small Package
MARKING:1P
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
75
40
6
600
150
833
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–523
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage = V(BR)CBO IC=10µA, IE 0
75
Collector-emitter breakdown voltage = V(BR)CEO IC=10mA, IB 0
40
Emitter-base breakdown voltage = V(BR)EBO IE=10µA, IC 0
6
Collector cut-off current
ICEX = VCE=60V, VEB(off) 3V
h= FE(1) VCE=10V, IC 0.1mA
35
= hFE(2) VCE=10V, IC 1mA
50
DC current gain
h= FE(3) VCE=10V, IC 10mA
75
hF= E(4) VCE=10V, IC 150mA
100
hF= E(5) VCE=10V, IC 500mA
40
Collector-emitter saturation voltage
IC=150mA, IB= 15mA
VCE(sat)
= IC=500mA, IB 50mA
Collector-emitter saturation voltage
IC=150mA, IB= 15mA
VBE(sat)
= IC=500mA, IB 50mA
Transition frequency
fT
VCE=20V,IC=20mA, f=100MHz
300
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Delay time
VCC=30V, VBE(off)=-0.5V IC=150mA,
td
IB1=15mA
Rise time
VCC=30V, VBE(off)=-0.5V IC=150mA,
tr
IB1=15mA
Storage time
ts
VCC=30V, IC=150mA, I= B1=IB2 15mA
Fall time
tf
VCC=30V, IC=150mA, IB1= IB2= 15mA
Max Unit
V
V
V
10
nA
300
0.3
V
1
V
1.2
V
2
V
MHz
8
pF
10
ns
25
ns
225
ns
60
ns
www.cj-elec.com
1
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