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NSVMMBT2222ATT1G Datasheet PDF : 6 Pages
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MMBT2222ATT1G,
NSVMMBT2222ATT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150
mW
833
°C/W
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
3
2
1
CASE 463
SOT−416/SC−75
STYLE 1
MARKING DIAGRAM
1P M G
G
1
1P
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
MMBT2222ATT1G
SOT−416 3000 / Tape &
(Pb−Free)
Reel
NSVMMBT2222ATT1G SOT−416 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
July, 2018 − Rev. 6
Publication Order Number:
MMBT2222ATT1/D
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