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BYW29E-150 Datasheet PDF : 10 Pages
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WeEn Semiconductors
BYW29E-150
Ultrafast power diode
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 25 °C; Fig. 4
IF = 20 A; Tj = 25 °C; Fig. 4
IF = 8 A; Tj = 150 °C; Fig. 4
IR
reverse current
VR = 150 V; Tj = 25 °C
VR = 150 V; Tj = 100 °C
Dynamic characteristics
Qr
trr
vFRM
recovered charge
reverse recovery time
forward recovery voltage
IF = 2 A; VR = 30 V; dIF/dt = 20 A/μs;
Tj = 25 °C; Fig. 5; Fig. 6
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7
IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
Tj = 25 °C; step recovery; Fig. 8
IF = 1 A; dIF/dt = 10 A/μs; Tj = 25 °C;
Fig. 9
Min Typ Max Unit
-
0.92 1.05 V
-
1.1 1.3 V
-
0.8 0.895 V
-
2
10
μA
-
0.2 0.6 mA
-
4
11
nC
-
20
25
ns
-
15
20
ns
-
1
-
V
IF
dlF
dt
trr
Qr
IR
IRM
time
25 %
100 %
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Fig. 4.
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Vo = 0.791 V; Rs = 0.013 Ω
Forward current as a function of forward voltage
Fig. 5.
Reverse recovery definitions; ramp recovery
BYW29E-150
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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