BYW29E-100 Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
Fabricante
BYW29E-100 Datasheet PDF : 10 Pages
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WeEn Semiconductors
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
repetitive peak reverse
voltage
VRWM
crest working reverse
voltage
VR
reverse voltage
IF(AV)
average forward current δ = 0.5 ; Tmb ≤ 128 °C ;square-wave pulse;
Fig. 1; Fig. 2
IFRM
repetitive peak forward
δ = 0.5 ; tp = 25 μs; Tmb ≤ 128 °C;
current
square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse
forward current
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
IRRM
repetitive peak reverse
δ = 0.001 ; tp = 2 μs
current
IRSM
non-repetitive peak
tp = 100 μs
reverse current
Tstg
storage temperature
Tj
junction temperature
Electrostatic discharge
VESD
electrostatic discharge
HBM; C = 250 pF; R = 1.5 kΩ
voltage
BYW29E-100
Ultrafast power diode
Values
Unit
100
V
100
V
100
V
8
A
16
A
80
A
88
A
0.2
A
0.2
A
-40 to 150
°C
150
°C
8
kV
IF(AV) = IF(RMS) × √δ
Vo = 0.791 V; Rs = 0.013 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
a = form factor = IF(RMS) / IF(AV)
Vo = 0.791 V; Rs = 0.013 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYW29E-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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