BYW29EX Ver la hoja de datos (PDF) - WeEn Semiconductors
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BYW29EX Datasheet PDF : 8 Pages
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WeEn Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYW29EX series
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Qs
Reverse recovery charge
trr1
Reverse recovery time
trr2
Reverse recovery time
Vfr
Forward recovery voltage
CONDITIONS
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.2
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
µA
CONDITIONS
IF = 2 A;
IF = 1 A;
-dIF/dt =
1VV0RR0≥≥A33/00µsVV;;
-dIF/dt
=
20
A/µs
IF
IF
=
=
0.5 A to IR
1 A; dIF/dt
=
=
110AA; /Iµresc =
0.25
A
MIN.
-
-
-
-
TYP.
4
20
15
1
MAX. UNIT
11 nC
25 ns
20 ns
-
V
September 2018
2
Rev 1.300
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