BYW29EX Ver la hoja de datos (PDF) - WeEn Semiconductors
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BYW29EX Datasheet PDF : 8 Pages
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WeEn Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYW29EX series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated epitaxial rectifier
diodes in a full pack plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times, soft recovery
characteristic and guaranteed reverse
surge and ESD capability. They are
intended for use in switched mode power
supplies and high frequency circuits in
general where low conduction and
switching losses are essential.
SYMBOL
VRRM
VF
IF(AV)
trr
IRRM
PARAMETER
BYW29EX-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
Repetitive peak reverse
current
MAX.
150
150
0.895
8
25
0.2
MAX.
200
200
0.895
8
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOD113
PIN
DESCRIPTION
1 cathode
2 anode
case isolated
PIN CONFIGURATION
mb
12
TO-220F (SOD113)
SYMBOL
K
A
001aaa020
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IF(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
-
Average forward current1
square wave; δ = 0.5;
Ths ≤ 106 ˚C
-
sinusoidal; a = 1.57;
Ths ≤ 109 ˚C
-
RMS forward current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
Ths ≤ 106 ˚C
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied
I2t for fusing
VRWM(max)
t = 10 ms
-
Repetitive peak reverse current
Non-repetitive peak reverse
tp
tp
=
=
2 µs; δ
100 µs
=
0.001
-
-
current
Storage temperature
-40
Operating junction temperature
-
MAX.
-150
150
150
150
-200
200
200
200
8
7.3
11.3
16
80
88
32
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
A2s
A
A
˚C
˚C
1 Neglecting switching and reverse current losses
September 2018
1
Rev 1.300
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