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BYW29E-200 Datasheet PDF : 11 Pages
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NXP Semiconductors
BYW29E-200
Ultrafast power diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Qr
recovered charge
trr
reverse recovery time
VFRM
forward recovery voltage
Conditions
IF = 8 A; Tj = 25 °C; see Figure 4
IF = 20 A; Tj = 25 °C; see Figure 4
IF = 8 A; Tj = 150 °C; see Figure 4
VR = 200 V; Tj = 25 °C
VR = 200 V; Tj = 100 °C
IF = 2 A; VR = 30 V; dIF/dt = 20 A/s;
Tj = 25 °C; see Figure 5; see Figure 6
IF = 1 A; VR = 30 V; dIF/dt = 100 A/s;
ramp recovery; Tj = 25 °C; see Figure 5;
see Figure 7
IF = 0.5 A; IR = 1 A; step recovery;
IR(meas) = 0.25 A; Tj = 25 °C; see Figure 8
IF = 1 A; dIF/dt = 10 A/s; Tj = 25 °C;
see Figure 9
Min Typ Max Unit
-
0.92 1.05 V
-
1.1 1.3 V
-
0.8 0.895 V
-
2
10 µA
-
0.2 0.6 mA
-
4
11
nC
-
20
25
ns
-
15
20
ns
-
1
-
V
30
IF
(A)
20
10
003aaj509
(1)
(2) (3)
0
0
0.5
1
1.5
2
VF (V)
IF
dlF
dt
trr
Qr
IR
IRM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYW29E-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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