BYW29E-200(2012) Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BYW29E-200
(Rev.:2012)

Ultrafast power diode

NXP Semiconductors. 

NXP Semiconductors

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance from junction to mounting base

thermal resistance from junction to ambient

Conditions

see Figure 3

in free air

10

Zth(j-mb)

(K/W)

1

BYW29E-200

Ultrafast power diode

Min Typ Max Unit

-

-

2.7 K/W

-

60

-

K/W

003aaj513

10-1

P

δ = tp

T

10-2

10-3

10-6

10-5

10-4

10-3

10-2

10-1

tp

t

T

1

10

tp (s)

Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width

BYW29E-200

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 5 — 20 March 2012

© NXP B.V. 2012. All rights reserved.

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