BYV29-600P Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
Fabricante
BYV29-600P Datasheet PDF : 10 Pages
| |||
WeEn Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
VF
forward current
IR
reverse current
Dynamic characteristics
Qr
reverse charge
trr
reverse recovery time
IRM
peak reverse recovery
current
Conditions
IF = 8 A; Tj = 25 °C; Fig. 6
IF = 8 A; Tj = 150 °C; Fig. 6
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; Fig. 7
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; Fig. 7
IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs;
Tj = 25 °C; Fig. 7
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; Fig. 7
BYV29-600P
Ultrafast power diode
Min Typ Max Unit
-
1.05 1.3 V
-
0.9
1.1
V
-
-
10
μA
-
-
0.4 mA
-
55
-
nC
-
40
75
ns
-
1.9
-
A
-
2.8
-
A
20
IF
(A)
16
atc12-006
IF
dlF
dt
(1) (2)
(3)
trr
12
time
25 %
8
Qr
100 %
4
0
0
1
2
VF (V)
Vo = 0.973 V; Rs = 0.0168 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage
IR
IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYV29-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
6 / 10
Share Link: 