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BYV29-600P Datasheet PDF : 10 Pages
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WeEn Semiconductors
BYV29-600P
Ultrafast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
repetitive peak reverse
voltage
VRWM
crest working reverse
voltage
VR
reverse voltage
DC
IF(AV)
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 150 °C;
Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward
δ = 0.5 ; tp = 25 μs; Tmb ≤ 150 °C;
current
square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
forward current
Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse;
Tstg
storage temperature
Tj
junction temperature
Values
Unit
600
V
600
V
600
V
9
A
18
A
120
A
132
A
-55 to 175
°C
175
°C
16
Ptot
(W)
12
8
4
atc12-001
δ=1
0.5
0.2
0.1
12
Ptot
(W)
10
8
6
4
2
atc12-002
a = 1.57
1.9
2.2
2.8
4.0
0
0
2
4
6
8 10 12 14
IF(AV) (A)
IF(AV) = IF(RMS) × √δ
Vo = 0.973 V; Rs = 0.0168 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
0
0
2
4
6
8
10
IF(AV) (A)
a = form factor = IF(RMS) / IF(AV)
Vo = 0.973 V; Rs = 0.0168 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYV29-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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