DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BT136X-800E Ver la hoja de datos (PDF) - WeEn Semiconductors

Número de pieza
componentes Descripción
Fabricante
BT136X-800E
WEEN
WeEn Semiconductors WEEN
BT136X-800E Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BT136X-800E
4Q Triac
Rev.01 - 17 April 2018
Product data sheet
1. General description
Planar passivated sensitive gate triac in a SOT186A (TO-220F) plastic package intended
for use in general purpose bidirectional switching and phase control applications. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
Isolated package
Direct triggering from low power drivers and logic ICs
Low holding current for small load currents and lowest EMI at commutation
3. Applications
General purpose motor control
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
Conditions
full sine wave; Th ≤ 92 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
Values
Unit
800
V
4
A
25
A
Min Typ Max Unit
-
2.5 10
mA
-
4
10
mA
-
5
10
mA
-
11
25
mA
-
2.2 15
mA

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]