BT138B-600E Ver la hoja de datos (PDF) - WeEn Semiconductors
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BT138B-600E Datasheet PDF : 13 Pages
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WeEn Semiconductors
BT138B-600E
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 99 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; sine-wave pulse
IG = 50 mA
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
15
IT(RMS)
(A)
12
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99 °C
50
IT(RMS)
(A)
40
Min Max Unit
-
600 V
-
12
A
-
95
A
-
105 A
-
45
A²s
-
50
A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
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9
30
6
20
3
10
0
-50
0
50
100
150
Tmb (°C)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
0 10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tmb = 99 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT138B-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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