BFG25A Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
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BFG25A Datasheet PDF : 12 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts ≤ 165 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
8
5
2
6.5
32
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
320
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector leakage current
hFE
DC current gain
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
F
noise figure
CONDITIONS
IE = 0; VCB = 5 V
IC = 0.5 mA; VCE = 1 V
IC = ic = 0; VCB = 1 V; f = 1 MHz
IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 500 MHz
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
MIN.
−
50
−
3.5
TYP.
−
80
0.21
5
MAX. UNIT
50
µA
200
0.3 pF
−
GHz
−
18
−
dB
−
1.8 −
dB
−
2
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming
S12 is
zero and
GUM
=
10
log----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB
Rev. 04 - 27 November 2007
3 of 12
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