isc N-Channel MOSFET Transistor
SPU01N60C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.1
3.9
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=0.5A
5.6
6
Ω
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 600V; VGS= 0V;Tj=25℃
VDS= 600V; VGS= 0V;Tj=150℃
ISD=0.8A, VGS =0V
±0.1 μA
1
100
μA
1.2
V
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark