SPU01N60C3 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

SPU01N60C3

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

·FEATURES

·With TO-251(IPAK) packaging

·High speed switching

·Easy to use

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·APPLICATIONS

·Power supply

·DC-DC converters

·Motor control

·Switching applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

600

VGSS

Gate-Source Voltage

±30

ID

Drain Current-Continuous

0.8

IDM

Drain Current-Single Pulsed

1.6

PD

Total Dissipation

11

Tj

Operating Junction Temperature

-55~150

Tstg

Storage Temperature

-55~150

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

MAX

11

75

UNIT

℃/W

℃/W

SPU01N60C3

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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