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LS310 Datasheet PDF : 1 Pages
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LS310
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS310 is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS310 Features:
Very high gain
Tight matching
Low Output Capacitance
FEATURES
HIGH GAIN
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
hFE ≥ 150 @ 10µA‐1mA
|VBE1 – VBE2 |= 0.2mV TYP.
250MHz TYP. @ 1mA
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐
1
3
mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T
|IB1 – IB2 |
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
‐‐
2
15
µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
‐‐
‐‐
‐‐
nA
IC = 10µA, VCE = 5V
Click |∆ (IB1 – IB2)|/°C
hFE1 /hFE2
Base Current Differential
Change with Temperature
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
To‐‐
‐‐
‐‐
10
Buy ‐‐
nA/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
‐‐
%
IC = 10µA, VCE = 5V
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
BVCBO
Collector to Base Voltage
25
‐‐
‐‐
V
BVCEO
Collector to Emitter Voltage
25
‐‐
‐‐
V
BVEBO
Emitter‐Base Breakdown Voltage
6.2
‐‐
‐‐
V
BVCCO
Collector to Collector Voltage
30
‐‐
‐‐
V
150
‐‐
‐‐
hFE
DC Current Gain
150
‐‐
‐‐
IC = 10µA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
150
‐‐
‐‐
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐
‐‐
0.25
V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
‐‐
‐‐
0.2
nA
IE = 0, VCB = 3V
ICBO
Collector Cutoff Current
‐‐
‐‐
0.2
nA
IE = 0, VCB = 20V
COBO
Output Capacitance
‐‐
‐‐
2
pF
IE = 0, VCB = 5V
CC1C2
Collector to Collector Capacitance
‐‐
‐‐
2
pF
VCC = 0V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐
0.5
nA
VCC = ±45V
fT
Current Gain Bandwidth Product
200
‐‐
‐‐
MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐
‐‐
3
dB
IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS310 in P-DIP
LS310 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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