MTP3N35 Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
MTP3N35 Datasheet PDF : 6 Pages
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IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11
N-Channel Power MOSFETs, 3.0A, 350-400V
Electrical Characteristics (Cont.) (Tc=25℃ unless otherwise noted)
Symbol Characteristic
Min
On Characteristics
VGS(th)
Gate Threshold Voltage
IRF320-323/IRF720-723
2.0
RDS(on)
MTP3N35/40
2.0
Static Drain-Source On-Resistance2
IRF320/321/720/721
IRF322/323/722/723
MTP3N35/40
VDS(on)
Drain-Source On-Voltage 2
MTP3N35/40
Max
4.0
4.5
1.8
2.5
3.3
12
10
gfs
Forward Transconductance
1.0
Dynamic Characteristics
Ciss
Input Capacitance
500
Coss
Output Capacitance
100
Crss
Reverse Transfer Capacitance
40
Switching Characteristics (Tc=200℃, Figures 1,2)3
td(on)
Turn-On Delay Time
40
tr
Rise Time
50
td(off)
Turn-Off Delay Time
100
tf
Fall Time
50
Qg
Total Gate Charge
15
Unit
V
Ω
V
V
S( )
pF
pF
pF
ns
ns
ns
ns
nC
Symbol Characteristic
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF320/321/720/721
IRF322/323/722/723
trr
Reverse Recovery Time
Typ
Max
Unit
1.6
V
1.5
V
450
ns
Notes
1. TJ=+25℃ to +150℃
2. Pulse test: Pulse width ≤ 60µs, Duty cycle ≤ 1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Test Conditions
ID=250µA, VDS=VGS
ID=1mA, VDS=VGS
VGS=10V, ID=1.5A
VGS=10V; ID=3.0A;
VGS=10V; ID=1.5A;
Tc=100℃
VDS=10V, ID=1.5A
VDS=25V, VGS=0V
f=1.0MHz
VDD=200V, ID=1.5A
VGS=10V, RGEN=50 Ω
RGS=50 Ω
VGS=10V, ID=4.0A
VDD=200V
Test Conditions
Is=3.0A; VGS=0V
Is=2.5A; VGS=0V
IF=3.0A;
dIs/dt=100A/µS
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