MTP3N35 Ver la hoja de datos (PDF) - Unspecified
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MTP3N35 Datasheet PDF : 6 Pages
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IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11
N-Channel Power MOSFETs, 3.0A, 350-400V
Maximum Ratings
Symbol
Characteristic
VDSS
VDGR
VGS
TJ, Tstg
TL
Drain to Source Voltage 2
Drain to Gate Voltage2
RGS=20k Ω
Gate to Source Voltage
Operating Junction and
Storage Temperatures
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5s
Rating
IRF320/322
IRF720/722
MTP3N40
400
400
±20
-55 to +150
275
Rating
Unit
IRF321/323
IRF721/723
MTP3N35
350
V
350
V
±20
V
-55 to +150
℃
275
℃
Maximum Thermal Characteristics
IRF320-323/
IRF720-723
R ӨJC
Thermal Resistance,
3.12
Junction to Case
R ӨJA
Thermal Resistance,
Junction to Ambient
30/80
PD
Total Power Dissipation
40
at Tc=25℃
IDM
Pulsed Drain Current2
12
Electrical Characteristics (Tc=25℃ unless otherwise noted)
MTP3N35/3N40
1.67
80
75
12
℃/W
℃/W
W
A
Symbol
Characteristic
Min
Max Unit
Test Conditions
Off Characteristics
V(BR)DSS
Drain Source Breakdown Voltage 1
IRF320/322/720/722
MTP3N40
400
V
VGS=0V, ID=250µA
IRF321/323/721/723/
MTP3N35
350
IDSS
Zero Gate Voltage Drain Current
250
µA
VDS=Rated VDSS, VGS=0V
1000 µA
VDS=0.8 x Rated VDSS,
VGS=0V, Tc=125℃
IGSS
Gate-Body Leakage Current
IRF320-323
nA
±100
VGS=±20V, VDS=0V
IRF720-723/MTP3N35/3N40
±500
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