SD703C25S20L Ver la hoja de datos (PDF) - Vishay Semiconductors
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SD703C25S20L Datasheet PDF : 12 Pages
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Fast Recovery Diodes
(Hockey PUK Version),
700/790 A
6
SD703C..S20L Series
5.5
TJ= 150 °C; Vr > 100V
5
4.5
IFM = 1000 A
Sine Pulse
4
500 A
3.5
150 A
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - d i/ dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
SD703C..L Series
Vishay High Power Products
7
6.5
SD703C..S30L Series
TJ = 150 °C; Vr > 100V
6
5.5
5
IFM = 1000 A
Sine Pulse
4.5
500 A
4
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fa ll Of Forward Current - di/d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
800
IFM = 1000 A
700
Sine Pulse
600
500
500 A
400
150 A
300
200
SD703C..S20L Series
100
TJ= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 23 - Recovery Charge Characteristics
1100
1000
900
I FM = 1000 A
Sine Pulse
800
700
500 A
600
500
150 A
400
300
200
SD703C..S30L Series
TJ= 150 °C; Vr > 100V
100
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
450
400
IFM = 1000 A
Sine Pulse
350
500 A
300
150 A
250
200
150
100
SD703C..S20L Series
TJ = 150 °C; Vr > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
550
500
I FM= 1000 A
450
Sine Pulse
500 A
400
150 A
350
300
250
200
150
100
SD703C..S30L Series
TJ = 150 °C; Vr > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 27 - Recovery Current Characteristics
Document Number: 93179
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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