MASW-004103-1365
Silicon SP4T Surface Mount HMIC PIN Diode Switch
50 MHZ - 20 GHz
Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω, 20 mA / -10 V
Parameter
Conditions
Units Min.
Insertion Loss
6 GHz
13 GHz
20 GHz
dB
—
Isolation
6 GHz
13 GHz
20 GHz
48
dB
38
29
Input Return Loss
6 GHz
13 GHz
20 GHz
17
dB
13
12
Output to Output Isolation
6 GHz
13 GHz
20 GHz
dB
—
Input 0.1dB Compression Point
2 GHz
dB
—
IIP3
Switching Speed1
0.5 GHz, 5 MHz Spacing, 20 dBm
1 GHz, 10 MHz Spacing, 20 dBm
2 GHz, 10 MHz Spacing, 20 dBm
—
dBm —
ns
—
Voltage Rating2
—
V
—
Rev. V5
Typ.
0.5
0.8
1.2
51
39
32
21
17
16
53.5
41.5
31.5
Max.
0.6
1.0
1.5
—
—
—
36
—
60
63
—
64
20
—
—
80
1. Typical Switching Speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers.
2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 µA maximum @ -80 volts.
Absolute Maximum Ratings3,4
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
Applied Reverse Voltage
RF CW Incident Power
2 GHz
20 GHz
Bias Current +25°C
|-80 V|
38 dBm
33 dBm
± 50 mA
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near
these survivability limits.
Static Sensitivity
These devices are rated at Class 1A Human Body
Model. Proper ESD control techniques should be
used when handling these devices.
Combined maximum operating conditions for RF
power, DC bias, & temperature: 33 dBm CW, 20 mA
per diode, +85ºC
2
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