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B72735D0050H062(2007) Ver la hoja de datos (PDF) - EPCOS AG

Número de pieza
componentes Descripción
Fabricante
B72735D0050H062
(Rev.:2007)
Epcos
EPCOS AG Epcos
B72735D0050H062 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CeraDiode
SMD type, array, case size 1012
B72735D0050H062
CDA6C05GTH
Characteristics (TA = 25 °C)
Parameter
Breakdown
voltage
Leakage current
Clamping voltage
Capacitance
Symbol
VBR
VBR
Ileak
Vclamp
Vclamp
C
C
Conditions
IBR = 1 mA
(any I/O Pin to GND)
IBR = 1 mA
(VDC to GND)
Vleak = 5.6 V
IPP = 1 A, 8/20 µs
(any I/O Pin to GND)
IPP = 1 A, 8/20 µs
(VDC to GND)
V = 1 V, f = 1 MHz
(any I/O Pin to GND)
V = 1 V, f = 1 MHz
(Any I/O Pin to I/O Pin)
Minim
um
52
14
-
-
-
-
-
Typical
-
-
-
-
-
7
3.5
Note: Any operating voltage lower than 5.6 V results in lower leakage current.
Maximum Unit
-
V
-
V
1
µA
195
V
40
V
10
pF
5
pF
Typical characteristics
110
%
90
80
70
60
50
40
30
20
10
0_ 55
MLV0013-Q-E
70 80 90 100 110 120 130 ˚C 150
TA
Please read Important notes at
the end of this document.
Page 5 of 10
2007-02-20

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