PN4275 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
PN4275 Datasheet PDF : 3 Pages
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NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CES
Collector-Emitter Breakdown Voltage
IB
Base Cutoff Current
IcBO
Collector Cutoff Current
l c = 10mA, IB =0
l c = 10jiA, IE = 0
IE= 10 (lA, lc = 0
lc=10nA,lB = 0
VCE = 20 V
VCB = 20 V, IE = 0,
TA = 65 °C
ON CHARACTERISTICS*
hFE
DC Current Gain
VcE(sat)
Collector-Emitter Saturation Voltage
VsE(sat)
Base-Emitter Saturation Voltage
lc= 10mA, VCE = 1.0V
lc = 30 mA, VCE = 0.4 V
lr.= 100mA, VCE = 1.0V
lc= 10mA, IB = 1.0mA
lc = 30 mA, IB = 3.0 mA
lc = 10 mA, IB = 3.3 mA
lc= 100mA, IB = 10mA
lc= 10 mA, IB = 1.0mA,
TA=65°C
lc= 10 mA, IB= 1.0 mA
I0 = 30 mA, IB = 3.0 mA
lc= 10 mA, IB = 3.3mA
lc= 100mA, IB = 10mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-Signal Current Gain
VCB = 5.0V, f = 1.0MHz
lc = 10 mA, VCE = 10 V,
f = 100 MHz
SWITCHING CHARACTERISTICS
ton
Tum-on Time
td
Delay Time
tr
Rise Time
Wf
Turn-off Time
ts
Storage Time
tf
Fall Time
ts
Storage Time
Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%
VCC = 3.0V, lc = 10mA,
IBI = 3.3mA,
VBE (off) = -3.0 V
Vcc=3.0V, lc = 10mA
IB1 = IB2 = 3.3mA
VBE (off) = -3.0 V
l c = lBi = lB2 = 10mA
15
V
40
V
4.5
V
40
V
0.4
HA
10
^A
35
120
30
18
0.20
V
0.25
V
0.18
V
0.50
V
0.30
V
0.72
0.85
V
1.15
V
0.74
1.0
V
1.6
V
4.0
pF
4.0
12
ns
9.0
ns
7.0
ns
12
ns
8.0
ns
8.0
ns
13
ns
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