D20 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

D20

Memory Micromodules General Information for D1, D2 and C Packaging

STMicroelectronics 

MICROMODULES

Table 3. Manufacturing Flow and Manufacturing Facility Locations

Operation

Location and Facility

Wafer Diffusion

Rousset, France. 6” wafer fab.

Agrate, Italy. 6” wafer fab.: standard EEPROM only

Electrical Wafer Test

Rousset, France.

Agrate, Italy: standard EEPROM only

Assembly

Casablanca, Morocco.

Final Test

Rousset, France.

Casablanca, Morocco.

Table 4. Material Specification

Material

Description

Tape

Basic material

MCTS T2 or IBIDEN rough, typical thickness 120 µm

Adhesive

Modified epoxy, typical thickness 18 µm

Laminated copper foil

Typical thickness 35 µm

Adhesive strength

> 0.8 N/mm at room temperature. Monitored by the tape manufacturer using

appropriate test methods

Tape Surface

The whole epoxy adhesive surface is controlled to be free of dirt, grease, cleaning

compounds and parting compounds

Surface roughness

Typically Rz: 3-12 µm at first accepted delivery

Contact surface

Nickel-gold, galvanised treatment

Nickel thickness

2 µm (min.)

Gold thickness

contact side, 0.1 µm (min.)

Total tape thickness

160 ± 30 µm

Control, Palmer

“Special flat” diameter 3 mm, F = 1.5 N

Chip Interconnect

Dice bonding

Silver epoxy

Bonding wire

Gold 25 µm

Ring (D22 only)

Bronze

Protective coating

Material

UV epoxy, Black epoxy

Assembly

Casablanca, Morocco.

3/13

Share Link: