BSS138NL6327 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSS138NL6327 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.23 A; V GS=10 V
8
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D
2
BSS138N
6
4
%98
1.6
%98
1.2
typ
0.8
typ
%2
2
0.4
0
-60
-20
20
60
100
140
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
102
Ciss
0
-60
-20
20
60
100
140
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
100
150 °C, 98%
150 °C
25 °C
25 °C, 98%
10-1
101
Coss
10-2
Crss
100
0
Rev. 2.82
10
20
V DS [V]
10-3
30
0
page 6
0.4 0.8 1.2 1.6
V SD [V]
2
2.4
2009-02-11
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