Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
í•œêµì–´
日本語
руÑÑкий
简体ä¸æ–‡
español
Número de pieza
componentes Descripción
BSS138NL6327 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSS138NL6327
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSS138NL6327 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSS138N
min.
Values
typ.
Unit
max.
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=30 V,
V
GS
=10 V,
-
t
d(off)
I
D
=0.23 A,
R
G
=6
Ω
-
t
f
-
32
41 pF
7.2
9.5
2.8
3.8
2.3
3.5 ns
3.0
4.5
6.7
10
8.2
12.3
Q
gs
-
Q
gd
V
DD
=48 V,
I
D
=0.23 A,
-
Q
g
V
GS
=0 to 10 V
-
V
plateau
-
0.10 0.14 nC
0.3
0.4
1.0
1.4
3.3
-V
I
S
I
S,pulse
T
A
=25 °C
-
-
0.23 A
-
-
0.92
V
SD
V
GS
=0 V,
I
F
=0.23 A,
T
j
=25 °C
-
0.83
1.2 V
t
rr
V
R
=30 V,
I
F
=0.23 A,
-
Q
rr
d
i
F
/d
t
=100 A/µs
-
9.1
14.5 ns
3.3
5 nC
Rev. 2.82
page 3
2009-02-11
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]