DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IRF430 Ver la hoja de datos (PDF) - Intersil

Número de pieza
componentes Descripción
Fabricante
IRF430 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF430
Typical Performance Curves Unless Otherwise Specified (Continued)
100
6
OPERATION IN THIS
VGS = 5.5V
AREA IS LIMITED
BY rDS(ON)
5
VGS = 10V
80µs PULSE TEST
10
1
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
100ms
DC
1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
4
VGS = 5V
3
2
VGS = 4.5V
1
0
VGS = 4V
0
100
200
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5
80µs PULSE TEST
4
3
2
VGS = 10V
VGS = 5.5V
VGS = 5V
VGS = 4.5V
1
VGS = 4V
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
5
VDS > ID(ON) x rDS(ON) MAX
80µs PULSE TEST
4 DUTY CYCLE 2%
3
125oC
25oC
2
-55oC
1
0
0
1
2
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
4
VGS = 10V
VGS = 20V
3
2
1
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4
2.2
ID = 1.5A
VGS = 10V
1.8
1.4
1.0
0.6
0.2
-60 -40 -20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE
ON RESISTANCE vs JUNCTION TEMPERATURE

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]